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HN1K05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K05FU
For Portable Devices High Speed Switching Applications Interface Applications
Unit: mm
* * *
High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact package.
Maximum Ratings (Ta = 25C) (Q1, Q2 common)
Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55 to 150 Unit V V mA mW C C
JEDEC JEITA TOSHIBA Weight: 6.8 mg
2-2J1C
Note: TOTAL rating
Electrical Characteristics (Ta = 25C) (Q1, Q2 common)
Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance 1 Drain-Source ON resistance 2 Drain-Source ON resistance 3 Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS V (BR) DSS IDSS Vth iYfsi RDS (ON) 1 RDS (ON) 2 RDS (ON) 3 Ciss Crss Coss ton Switching time toff Test Condition VGS = 10 V, VDS = 0 V ID = 100 mA, VGS = 0 V VDS = 20 V, VGS = 0 V VDS = 1.5 V, ID = 0.1 mA VDS = 1.5 V, ID = 10 mA ID = 1 mA, VGS = 1.2 V ID = 10 mA, VGS = 1.5 V ID = 10 mA, VGS = 2.5 V VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDD = 1.5 V, ID = 10 mA, VGS = 0 to 1.5 V VDD = 1.5 V, ID = 10 mA, VGS = 0 to 1.5 V Min 3/4 20 3/4 0.5 35 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 70 15 10 7 12 3.4 12 0.35 0.2 Max 1 3/4 1 1 3/4 50 40 28 3/4 3/4 3/4 3/4 ms 3/4 Unit mA V mA V mS W W W pF pF pF
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2002-01-16
HN1K05FU
Equivalent Circuit (top view)
6 5 4
Marking
6 5 4
Q1 Q2
KK
1 (Q1, Q2 common)
2
3
1
2
3
Switching Time Test Circuit
(a) Test circuit
ID 1.5 V 0 10 ms VIN IN 50 W RL OUT VDD = 1.5 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25C
(b) VIN
VGS
1.5 V 10%
90%
0 VDD
(c) VOUT
VDS
VDS (ON) 90% tr ton toff
10%
VDD
tf
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HN1K05FU
(Q1, Q2 common)
100
ID - VDS
2.0 V 1.8 V Common source
ID - VDS (low voltage region)
100 Common source Ta = 25C 2.5 V 2.2 V 1.6 V 60 2.0 V 1.8 V
(mA)
1.6 V
Drain current ID
60
Drain current ID
(mA)
80
80
40
1.4 V
40
1.4 V
1.2 V 20 VGS = 1 V
1.2 V 20 VGS = 1 V
0 0
4
8
12
16
20
0 0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
100 Common source VDS = 1.5 V 10 Ta = 100C
ID - VGS
100 Common source Ta = 25C
RDS (ON) - ID
Drain-source on resistance RDS (ON) (W)
(mA)
1.2 V 1.5 V 10
Drain current ID
25C 1
-25C
VGS = 2.5 V
0.1
0.01 0
0.5
1
1.5
2
2.5
1 0.1
1
10
100
Gate-source voltage VGS (V)
Drain current ID
(mA)
RDS (ON) - Ta
50 Common source 40 1000
iYfsi - ID
Common source VDS = 1.5 V Ta = 25C
Forward transfer admittance iYfsi (mS)
Drain-source on resistance RDS (ON) (W)
100
30
20
VGS = 1.5 V, ID = 10 mA VGS = 1.2 V, ID = 1 mA
10
10 VGS = 2.5 V, ID = 10 mA 0 -50 0 50 100 150
1 1
10
100
1000
Ambient temperature Ta (C)
Drain current ID
(mA)
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2002-01-16
HN1K05FU
(Q1, Q2 common)
C - VDS
100 Common source VGS = 0 10000
t - ID
Common source VDD = 1.5 V
Capacitance C (pF)
(ns)
f = 1 MHz Ta = 25C
VGS = 0 to 1.5 V Ta = 25C 1000 toff
10
Ciss Coss
Switching time t
ton 100 tr
tf
Crss 0 0.1 1 10 100 10 0.1 1 10 100
Drain-source voltage VDS
(V)
Drain current ID
(mA)
PD* - Ta
300
Drain power dissipation PD* (mW)
200
100
0 0
40
80
120
160
Ambient temperature Ta (C)
*: TOTAL rating
4
2002-01-16
HN1K05FU
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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2002-01-16

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